Metal-to-Semiconductor Transition in Squashed Armchair Carbon Nanotubes
نویسندگان
چکیده
منابع مشابه
Metal-to-semiconductor transition in squashed armchair carbon nanotubes.
We investigate electronic transport properties of the squashed armchair carbon nanotubes, using tight-binding molecular dynamics and the Green's function method. We demonstrate a metal-to-semiconductor transition while squashing the nanotubes and a general mechanism for such a transition. It is the distinction of the two sublattices in the nanotube that opens an energy gap near the Fermi energy...
متن کاملAnalysis of band-gap formation in squashed armchair carbon nanotubes
The electronic properties of deformed armchair carbon nanotubes are modeled using constraint free density functional tight binding molecular dynamics simulations. Independent from CNT diameter, deforming path can be divided into three regimes. In the first regime, the nanotube deforms with negligible force. In the second one, there is significantly more resistance to deforming with the force be...
متن کاملMetal–insulator–semiconductor electrostatics of carbon nanotubes
Carbon nanotube metal–insulator–semiconductor capacitors are examined theoretically. For the densely packed array of nanotubes on a planar insulator, the capacitance per tube is reduced due to the screening of the charge on the gate plane by the neighboring nanotubes. In contrast to the silicon metal–oxide–semiconductor capacitors, the calculated C – V curves reflect the local peaks of the one-...
متن کاملConductance oscillations in squashed carbon nanotubes.
We report measurements on the radial electromechanical properties of single walled carbon nanotubes. By measuring the conductance of the nanotube, we show that a gap is opened while squashing the nanotubes and that during the deformation stages we observe at least two open-close cycles of the gap. We employ a novel experimental setup where an atomic force microscope tip is used both as an elect...
متن کاملScalable light-induced metal to semiconductor conversion of carbon nanotubes.
Coexistence of metallic and semiconducting carbon nanotubes in as-grown samples sets important limits to their application in high-performance electronics. We present the metal-to-semiconductor conversion of carbon nanotubes for field-effect transistors based on both aligned nanotubes and individual nanotube devices. The conversion process is induced by light irradiation, scalable to wafer-size...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2003
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.90.156601